Total space: 1430 m2
Laboratory space: 1100 m2, including 90 m2 in the Technology Hall of the Department. 120 m2 laboratory space plus office and laboratories, which belongs to the Laboratory of Crystal Growth of the "Fraunhofer Institute for Integrated Circuits".
Crystal growth
- 3 inductively heated reactors for SiC bulk crystal growth (T ≈ 2500 °C; p ≈ 30 mbar), one of them provided with in-situ growth control by X-rays
- resistively heated high pressure (p ≈ 200 bar) and high temperature (T ≈ 2300 °C) reactor for SiC and ZnSe liquid phase growth
- 2 high-pressure Czochralski pullers
- 3 high-pressure multi-zone cold wall furnaces (for 2" - 6" crystal diameter, used for VGF growth of InP and VGF growth of GaAs)
- furnaces for solution growth (for 1" crystal diameter, used for growth of CuInSe2 by THM and SBM)
- Liquid phase epitaxy facilities
- Facility for AlN sublimation growth process
- Micro-puller for fiber growth
- HVPE (hydrogenated vapour phase epitaxy) facility for GaN
- Magnet for axial steady field (inner diameter 50 cm, Bmax = 0.2 T)
- Magnet system for rotating fields (variable diameter)
Preparation and metallography
- Inner diameter saw and precision grinding systems (G&N, Erlangen) for wafering and surface preparation of SiC wafers
- Facilities for preparative work related to III-V compound wafer preparation (grinder, annular saws, lapping and polishing equipment)
- 2 evaporation systems
- Sputtering systems (DC, 6" target diameter) Others
- 15 powerful PCs for numerical modelling
- Particle size analyse Beckmann-Coulter
- "Labor-Zickzacksichter Alpine AG" for production of defined powder fractions
Charakterization
- Scanning electron microscope, Jeol 6400
- Cathodoluminescence set to the Jeol 6400, Oxford Instr.
- Optical/infrared microscope, Reichert-Jung
- Other different optical microscopesy
- Optical Set-up for photoluminescence and absorption spectroscopy of wide band gap semiconductors by a blue/uv - argon ion laser system
- Mapping system for optical spectroscopy of semiconductor wafers
- Interferometric profilometer for surface analysis of semiconductor wafers
- 2 photo- and thermoluminescence systems with X-ray excitation
- Excimer laser system including dye laser and Raman shifter
- X-ray Laue camera
- Hall-measurement-system (temperature dependent 15 K-650 K)
- Laterally resolved resistivity measurements by 4-point-probe-method and spreading resistance (resolution 20 µm)
- Measurement system for characterization of deep and shallow levels by capacitance techniques (CV, DLTS) and by conductance techniques (TSC, PICTS)
- Photoluminescence system (14 K and 300 K), IR-absorption, both systems suitable for mapping
- Atomic absorption spectrometry for trace analysis
- Differential Thermal Analysis for determination of phase diagrams
- Differential Scanning Calorimeter for thermodynamic and kinetic studies
- Frequency converter (P = 90 kW, f = 1...1000 Hz)
- 2 He-Temperature cryostats, T-controlled
- Closed-cylce cryostat (15 K - 320 K), T-controlled
- Gaussmeter for magnetic induction measurements (3 axes)